Product Introduction
SiC, silicon carbide, is a compound semiconductor material composed of carbon and silicon, making it one of the ideal materials for fabricating high-temperature, high-frequency, high-power, and high-voltage devices.
The core advantages of silicon carbide raw materials lie in:
- High voltage resistance: Lower impedance and a wider bandgap enable these materials to handle higher currents and voltages, leading to smaller product designs and improved efficiency.
- High-frequency capability: SiC devices exhibit no current tailing during turn-off, effectively boosting the switching speed of the components—approximately 3 to 10 times faster than silicon—making them ideal for higher frequencies and quicker switching applications.
- Heat-resistant: Compared to silicon, SiC boasts higher thermal conductivity, allowing it to operate at much higher temperatures.
Compared to traditional silicon (Si), silicon carbide (SiC) has a bandgap that is 3 times wider than silicon's; its thermal conductivity is 4 to 5 times higher; its breakdown voltage is 8 to 10 times greater; and its electron saturation drift velocity is 2 to 3 times faster than silicon's.
Silicon Carbide – Ceramic
Silicon carbide ceramics, as a high-performance structural ceramic material, exhibit exceptionally superior comprehensive properties—properties unmatched by metallic and other structural materials—owing to their crystal structure and the highly covalent nature of the Si-C bond (~88%).
- High-temperature strength, low high-temperature creep—perfectly suited for a variety of extreme heat environments.
- Low thermal expansion coefficient, high thermal conductivity, and excellent resistance to thermal shock;
- High chemical stability and excellent corrosion resistance;
- High hardness, low coefficient of friction, and excellent wear resistance;
- Low density, high modulus of elasticity;
- Electrical properties can be tuned through doping, enabling transitions from insulating to semiconducting and eventually to conductive states.
- It exhibits excellent chemical stability, high-temperature phase stability, and corrosion resistance.
Silicon carbide wafer
SiC, silicon carbide, is a compound semiconductor material composed of carbon and silicon, making it one of the ideal materials for fabricating high-temperature, high-frequency, high-power, and high-voltage devices.
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